2D quantum memory device reaches single-electron limit of information… | HappeningNow.news

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2D quantum memory device reaches single-electron limit of information storage

Most electronic memory storage devices require the ability to trap large numbers of electrons for each bit of memory.

Source Phys.org AI Summary Updated 1h 37m ago
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Most electronic memory storage devices require the ability to trap large numbers of electrons for each bit of memory. In an ideal world, however, it would take only one electron. This would reduce space requirements and power consumption for devices. Now, a team in China has realized this goal with an ultrathin device capable of minimizing the stray capacit…

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